The BT1M120 family of silicon carbide (SiC) switches handles voltages up to 1,200 V.
The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For bare-die applications such as inverter modules, also non-packaged chip versions are available.
Available in SMD and THT packages
Bare-die chips on demand
Bosch dual channel trench gate technology for lower RDS(on) × A
Switching speed adjustable with gate resistors